Characterization of Silicon Single Crystals

Silicon characterization is a crucial step in the manufacturing process, ensuring the quality and performance of the devices. This chapter provides an overview of key techniques used to characterize the structural, physical (geometrical), optical and electrical properties of silicon crystals and wafers. Electrical characterization techniques, such as resistivity, carrier lifetime, and Hall Effect measurements, assess the electrical conductivity and carrier properties. Optical characterization techniques, including infrared and ellipsometry, provide insights into the geometrical properties by optical interferences. Structural characterization techniques, such as X-ray diffraction, reveal the crystal orientation and defects. Chemical characterization techniques, such as FTIR, ICP-MS, analyze the oxygen, carbon and other metal impurities. By employing these characteristics, the industries can optimize the fabrication process and improve the performance and reliability of silicon-based devices.